In the look for lead-free, Si-microfabrication-compatible piezoelectric products, thin movies of scandium-doped aluminum nitride (Al, Sc) N are of excellent interest for usage in actuators, energy harvesting, and micro-electromechanical-systems (MEMS). *
While the piezoelectric action of AlN increases upon doping with Sc, troubles are experienced throughout movie preparation due to the fact that, as bulk solids with totally various structures and big distinctions in cation radii, ScN (rock salt, cubic) and AlN (wurtzite, hexagonal) are immiscible. *
As A Result, (Al, Sc) N is naturally thermodynamically unsteady and susceptible to stage partition. Movie preparation is even more made complex by the technological requirement for polar [001] or [00 1̲] out-of-plane texture, which is attained utilizing a seeding layer. *
In the short article “ C-Axis Textured, 2– 3 μm Thick Al0.75 Sc0.25 N Movies Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications” Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre propose a procedure for effectively transferring [001] textured, 2– 3 µm thick movies of Al0.75 Sc0.25 N. *
The treatment counts on the truth that sputtered Ti is [001]- textured α-phase (hcp). Diffusion of nitrogen ions into the α-Ti movie throughout reactive sputtering of Al0.75, Sc0.25 N most likely kinds a [111]- oriented TiN intermediate layer. The lattice inequality of this really thin movie with Al0.75 Sc0.25 N is ~ 3.7%, supplying exceptional conditions for epitaxial development. In contrast to earlier reports, the Al0.75 Sc0.25 N movies prepared in the existing research study are Al-terminated. Low development tension (<< 100 MPa) permits movies as much as 3 µm thick to be transferred without loss of orientation or reduce in piezoelectric coefficient. *
A benefit of the proposed method is that it works with a range of substrates typically utilized for actuators or MEMS, as shown here for both Si wafers and D263 borosilicate glass. Furthermore, thicker movies can possibly result in increased piezoelectric stress/strain by supporting application of greater voltage, however without boost in the magnitude of the electrical field. *
SEM, AFM, EDS, XRD and XPS strategies were utilized for the movie characterization. For the nanoscale topography maps with atomic force microscopy (AFM) NanoWorld Pyrex-Nitride series PNP-TRS silicon nitride AFM probes were utilized in peak-force tapping 1 ® mode. *
* Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre
C-Axis Textured, 2– 3 μm Thick Al0.75 Sc0.25 N Movies Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications
Sensing Units 2022, 22, 7041
DOI: https://doi.org/10.3390/s22187041
The short article “ C-Axis Textured, 2– 3 μm Thick Al0.75 Sc0.25 N Movies Grown on Chemically Formed TiN/Ti Seeding Layers for MEMS Applications” by Asaf Cohen, Hagai Cohen, Sidney R. Cohen, Sergey Khodorov, Yishay Feldman, Anna Kossoy, Ifat Kaplan-Ashiri, Anatoly Frenkel, Ellen Wachtel, Igor Lubomirsky and David Ehre is accredited under an Imaginative Commons Attribution 4.0 International License, which allows usage, sharing, adjustment, circulation and recreation in any medium or format, as long as you provide proper credit to the initial author( s) and the source, supply a link to the Creative Commons license, and suggest if modifications were made. The images or other third-party product in this short article are consisted of in the short article’s Creative Commons license, unless shown otherwise in a credit limit to the product. If product is not consisted of in the short article’s Creative Commons license and your planned usage is not allowed by statutory guideline or surpasses the allowed usage, you will require to acquire approval straight from the copyright holder. To see a copy of this license, check out https://creativecommons.org/licenses/by/4.0/
1 Peak Force Tapping ® is a signed up hallmark of Bruker Corporation.